<?xml version="1.0" encoding="UTF-8"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-10-29T19:59:09Z</responseDate><request verb="GetRecord" identifier="oai:munzur-rdlopen.rawdatalibrary.net:munzur/1095" metadataPrefix="oai_dc">https://munzur-rdlopen.rawdatalibrary.net/oai/request</request><GetRecord><record><header><identifier>oai:munzur-rdlopen.rawdatalibrary.net:munzur/1095</identifier><datestamp>2026-10-28T15:28:28Z</datestamp><setSpec>openaire</setSpec><setSpec>com_munzur_1</setSpec><setSpec>col_munzur_2</setSpec><setSpec>com_munzur_12</setSpec><setSpec>col_munzur_165</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:title>Interfacial Polarization in PS/Sm2O3 Nanocomposite Films for Low-Loss Frequency-Dependent Dielectric Application</dc:title><dc:creator>Güner, Melek</dc:creator><dc:creator>Özkan, Betül Çiçek</dc:creator><dc:creator>Gürgenç, Ezgi</dc:creator><dc:creator>Macit, Cevher Kürşat</dc:creator><dc:creator>Aslan, Naim</dc:creator><dc:creator>Gurgenc, Turan</dc:creator><dc:description>Rare-earth oxide nanoparticles offer a strategy to tune dielectric films via interfacial polarization while maintaining low-loss insulating behavior. Here, polystyrene/samarium oxide (PS/Sm2O3) nanocomposite films containing 0, 1, 3, 5, and 10 wt.% Sm2O3 were fabricated by solvent casting and evaluated as a low-loss dielectric for frequency-sensitive electronic applications. FTIR, XRD, SEM/EDX, and XPS confirmed successful Sm2O3 incorporation, preservation of the PS structure, formation of PS/Sm2O3 interfacial regions, and Sm3+/Sm–O species. XRD revealed amorphous PS with increasingly intense crystalline Sm2O3 reflections, whereas SEM/EDX showed relatively uniform filler distribution at low and moderate loadings and partial agglomeration at 10 wt.%. Dielectric spectroscopy at room temperature from 1 kHz to 1 MHz showed a frequency-dependent response governed by interfacial polarization and limited charge transport. At 1 kHz, the dielectric constant increased from 8.67241 ± 0.00280 for pure PS to 10.13061 ± 0.00641 for PS-10, while the loss tangent remained low (∼ 0.068). The dielectric loss increased moderately from 0.59535 ± 0.00236–0.69194 ± 0.00710, and AC conductivity rose from (3.31202 ± 0.01314) × 10−10 to (3.84935 ± 0.03948) × 10−10 S cm−1. These results indicate interface-controlled dielectric enhancement without conductive percolation, highlighting PS/Sm2O3 films for capacitor dielectric layers, insulating films, flexible electronics, and frequency-sensitive dielectric technologies.</dc:description><dc:publisher>Institute of Physics</dc:publisher><dc:date>2026</dc:date><dc:type>Article</dc:type><dc:identifier>https://rdlopen.rawdatalibrary.net/r/munzur/1095</dc:identifier><dc:identifier>https://doi.org/10.1149/2162-8777/aeac85</dc:identifier><dc:identifier>2162-8769</dc:identifier><dc:language>en</dc:language><dc:relation>ECS Journal of Solid State Science and Technology</dc:relation><dc:rights>info:eu-repo/semantics/closedAccess</dc:rights><dc:type>info:eu-repo/semantics/article</dc:type><dc:identifier>https://munzur-rdlopen.rawdatalibrary.net/tr/items/munzur/1095</dc:identifier></oai_dc:dc></metadata></record></GetRecord></OAI-PMH>