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2 →- MakaleYalnız künye2024Scopus SJRQ1Preparation and characterization of the highly efficient tetraphenylimidazole substituted Phthalocyanine/ZnO composite and investigation of its effect on the photocatalytic degradation of Rhodamine B and 2,4,6-trichlorophenol
Karaoğlu, Kaan; Yüzüak, Gizem Durak; Yüzüak, Ercüment; Turan, Hanife; Akçay, Hakkı Türker
Growing concerns about industrial waste-induced environmental degradation have driven research towards sustainable solutions. Photocatalytic degradation, fueled by light and avoiding harmful chemicals, offers a promising avenue due to its minimal environmental impact. ZnO, TiO₂, and their derivatives are particularly effective and widely studied photocatalysts. This study aims to prepare new composite materials bearing phthalocyanine and investigate the photocatalytic properties on the degradation of Rhodamine B dye and 2,4,6-trichlorophenol (TCP) as the model compounds. In the initial step, ZnO materials were synthesized using the solvothermal method. Subsequently, a novel Zn(II) complex, including peripherally tetra phenyl imidazole substituted phthalocyanine, was successfully prepared. The composite catalysts were prepared from ZnO materials produced with the tetraphenyl imidazole phthalocyanine Zn(II) complex, called TFI-Zn. The were characterized using instrumental techniques. The photocatalytic characteristics of the composite materials developed were further examined under varying quantities of catalyst and Rhodamine B, variable pH conditions, and varying intensities of UV-A light. In addition, the reusability of the catalyst was investigated. With the new composite photocatalyst prepared within the scope of this study, 98% degradation efficiency and 8.0 × 10−4 min−1 degradation rate was obtained on Rhodamine B solution in 40 min. The newly developed photocatalyst displayed remarkable catalytic activity that remained virtually unchanged for five consecutive cycles, indicating excellent reusability and operational stability. The photocatalytic degradation performance of ZnO-TFI-Zn (1) was also examined on TCP and 90% degradation activity was obtained at the end of 80 min.
AtıfScopus7WoS7OpenAlex7İncele
- BildiriYalnız künye2014Scopus SJRQ2An organic-inorganic rectifying contact based on a ZnPc derivative
Ozerden, Enise; Yildiz, Mustafa; Ocak, Yusuf Selim; Tombak, Ahmet; Kilicoglu, Tahsin
An organic-inorganic rectifying contact was fabricated by forming a thin film of a Zinc Phthalocyanine (ZnPc) derivative, Zinc 2,3,9,10,16,17,23,24-octakis(octyloxy)-29H, 31H-phthalocyanine (oc-ZnPc), on a p-Si wafer and evaporating Al on the structure. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of Al/oc-ZnPc/p-Si structure were taken in dark at room temperature. The I-V measurements proved that the structure showed excellent rectification. Some basic diode parameters like ideality factor and barrier height were calculated from lnI-V plot. Ideality factor and barrier height values were found as 144 and 0.78 eV, respectively. The series resistance value of the structure was determined as 5.46 k Omega by means of Norde functions. The C-V measurements were taken for various frequencies and it was seen that the capacitance value decreased with increasing frequency. In addition I-V measurements of the Al/oc-ZaPc/p-Si/Al were repeated under light which had illumination intensity of 40-100 mW/cm(2). It was observed that reverse bias current of the diode increased with the light intensity. Therefore, the structure showed photodiode characteristics and it can be used for electrical and optoelectronic applications. (C) 2014 Elsevier Ltd. All rights reserved.
AtıfWoS10OpenAlex12İncele
Tam Kayıt
| Alan | Değer | Dil |
|---|---|---|
| creativeworkseries.issn | 1369-8001 | |
| dc.date.accessioned | 2026-10-28T14:54:48.537534736Z | |
| dc.date.available | 2026-10-28T14:54:48.537534736Z | |
| dc.identifier.uri | https://rdlopen.rawdatalibrary.net/r/munzur/1995 | |
| dc.publisher | Elsevier Ltd | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.title | Materials Science in Semiconductor Processing |


