Sürdürülebilir Kalkınma Amaçları
Bu dergideki yayınlar
2 →- MakaleYalnız künye2026Scopus SJRQ1Influence on the thermoelectric characteristics of the growth parameters of BiSeTe thin films
Yüzüak, G. Durak; Yüzüak, E.
This study systematically investigates the influence of magnetron sputtering parameters on the structural, electronic, and thermoelectric properties of 100 nm thick Bi2SexTe3-x thin films deposited on Si(100). The initial parameters for applied film deposition are used to set the x value. The films are fabricated with sputtering powers ranging from 30 to 100 W and pressures from 3 to 15 mTorr, with films grown under optimal conditions selected for post-deposition annealing at 523 K. A comprehensive characterization suite, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM), is used to establish direct correlations between processing, structure, and performance. XRD analysis reveals that increasing the sputtering pressure from 3 to 15 mTorr was critical for enhancing film crystallinity and promoting a strong (015) preferred orientation, while AFM showed a corresponding increase in average grain size from similar to 46 to similar to 60 nm via heat treatment (HT). EDS shows that films grown at 10 mTorr were almost certainly stoichiometric, but increasing the power to 15 mTorr caused tellurium deficiency. The films exhibited a power factor ranging from 2.5 to 2.8 mW m(- 1) K- 2 at 40 degrees C. HT improved the Seebeck coefficient from -115 mu V K- 1 to -140 mu V K- 1 and decreased the electrical resistivity by over 25 % through defect reduction and enhanced crystalline order. KPFM supported these findings, directly linking the crystallographic texture to the surface electronic structure and enhanced Seebeck effect.
AtıfWoS2OpenAlex2İncele
- MakaleAçık Erişim2023Scopus SJRQ1Influence of chemical etchings on surface properties, in-vitro degradation and ion releases of 316l stainless steel alloy for biomedical applications
Say, Y.; Aslan, N.; Alla, A.M.A.; Özmen, H.
Different surface treatments are applied to improve the surface properties of metallic biomaterials. Chemical etching is one of the common techniques used for roughening the surface. In this regard, the effects of different chemical media on the surface roughness, degradation, and ion release of 316L SS steel were investigated in this study. The 316L SS steel was exposed to chemical etching in six different chemical media including HNO3, H2SO4, HCl, HClO4, NaOH and Na2CO, at four different concentrations (1, 2, 4, and 8 Molar), and at three immersion times (10, 60, and 180 min). SEM, EDS, and XRD analyses were used to examine the morphological and chemical impacts of chemical etching on sample surfaces, and roughness was measured on all sample surfaces. The effect of surface treatment on the degradation and ion release of the samples was comparatively examined. Characterization analyses indicated that the HNO3, H2SO4, and HCl media did not cause a significant reaction on the surface of the 316L SS. On the other hand, different phases were observed on the sample surfaces exposed to HClO4, NaOH, and Na2CO3 media. It was determined that the roughness had no linear correlation with the concentration and immersion time, and similarly, the degree of degradation and amount of ion release displayed no change depending on the roughness. Samples etched in H2SO4, HClO4, NaOH and Na2CO3 provided the highest roughness. It was found that H2SO4 caused a significant increase in the amount of ion release.
AtıfScopus18WoS17OpenAlex20İncele
Tam Kayıt
| Alan | Değer | Dil |
|---|---|---|
| creativeworkseries.issn | 0254-0584 | |
| dc.date.accessioned | 2026-10-28T14:55:53.988857395Z | |
| dc.date.available | 2026-10-28T14:55:53.988857395Z | |
| dc.identifier.uri | https://rdlopen.rawdatalibrary.net/r/munzur/2860 | |
| dc.publisher | Elsevier Ltd | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.title | Materials Chemistry and Physics |

