Demirelli, Kadir; Barım, Esra; Tuncer, Hülya; Dere, Ayşegül; Canbay, Canan Aksu; Karaduman, Oktay; Al-Sehemi, Abdullah G.; Al-Ghamdif, Ahmed A.; Yakuphanoğlu, Fahretttin

The synthesis of poly[4-(4-vinylbenzyl)oxy)phthalonitrile-co-styrene] [P(VBOPN5 %-co-St)] was carried out by free radical polymerisation at 60 °C. The successful formation of a green coloured single-chain polymer molecule with the formation of cobalt phthalocyanine (SCP-CoPc) was performed at 140–150 °C in the presence of dilute cyclohexanol. The characterization of SCP-CoPc was confirmed by FT-IR and UV/vis spectroscopic techniques. The absorption filtration process of the SCP-CoPc polymer/Sudan III composite was investigated. The introduction of Sudan III into the SCP-CoPc polymer matric strongly affected the optical transmission spectrum of the composite films. The optical transmission measurements of the SCP-CoPc/Sudan III thin film show a high absorption in the visible region (400–800 nm). In the SCP-CoPc/Sudan III composites, the optical band gaps (Eg1 and Eg2) of each of its components has changed significantly. The Eg1 and Eg2 were found to be between 1.90 and 2.83 eV, respectively. Depending on the sudan III content, a wide range from 600 nm to 730 nm indicates complete absorption filtration. The dc electrical conductivity and dielectric behavior of the SCP-CoPc/Nanografene (NG) 6 wt% nanocomposite increased with increasing temperature. From the dc conductivity plot, the Ea values of I. and II. regions were found to be 0.75 eV and 0.27 eV, respectively and it was found that the calculated activation energy obeyed the Arrhenius relationship. The refractive index and the optical permittivity of SCP-CoPc/NG 6 wt% have been estimated.

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Aslan, Naim; Koç, Mümin Mehmet; Dere, Ayşegül; Arif, Bilal; Erkovan, Mustafa; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, Fahrettin

Electrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current–voltage (I–V) characteristics of the Al/a:C/p-Si/Al doped Ti diode for optoelectronic applications were investigated. The reverse current of the diode increased with the increasing illumination intensities when the bias voltage was applied. By using the forward bias I–V characteristics, the ideality factor (n) and barrier height (Φb) of Al/Ti-a:C/p-Si photodiode structure was found as 1,84 and 0,50 eV, respectively. In addition, the capacitance–voltage (C–V) and conductance–voltage (G–V) measurements of the diode were studied in the frequency range of 100 kHz–600 kHz. The measured values of the capacitance decreased with the increasing frequency. The photoelectrical properties of Al/Ti-a:C/p-Si/Al device indicates that the photodiode investigated in this paper has great potential to be used in optoelectronic device applications and in industry.

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