Aslan, Naim; Şükrü Kurt, Mustafa; Mehmet Koç, Mümin; Yilmazer, Yasemin; Coskun, Burhan; Aksakal, Bünyamin

DLC films represent a promising class of materials that can be used in various applications due to their optical, optoelectronic, tribological, and biomedical characteristics. In this work, GeAg- and TiO2-modified DLC thin films were prepared using the magnetron sputtering method under ultrahigh vacuum conditions. DLC thin film characteristics and addition of GeAg and TiO2 into the DLC structure were confirmed and subsequently assessed via scanning electron microscopy (SEM), atomic force microscopy, energy dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy. DLC thin film thicknesses were determined via SEM and found to be 235 nm and 380 nm for DLC/TiO2 and DLC/GeAg thin films, respectively. Contact angle and surface wettability analyses were performed for uncoated glass, GeAg- and TiO2-modified DLC thin films. The antibacterial properties of the DLC films were assessed for E. coli and S. aureus. The biocompatibility of these same films was confirmed using the L929 cell line, where no toxic effect was evidenced. To elucidate the optical characteristics of the thin films, a UV–vis spectrum was obtained, and band gap energies were proposed using these data. Photoresponse characteristics of the DLC thin films were assessed under varying illumination using current–time plots. It could be seen that DLC thin films’ responsiveness to light was dependent on illumination intensity. The results demonstrate that nanostructures are good candidates for multifunctional applications exhibiting good antibacterial and photoresponsive characteristics with outstanding biocompatibility.

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Unal, Fatih; Aktas, Sitki; Kurt, Mustafa Sukru; Koc, Mumin Mehmet; Coskun, Burhan; Aslan, Naim; Arslan, Tayfun; Gur, Mahmut

The fabrication and characterization of high-performance devices for optoelectronic applications, particularly their response to incident light, are crucial. In this study, a MnPc/DLC device was fabricated using thermal evaporation and magnetron sputtering techniques, and its fundamental optoelectronic properties were characterised. Key diode parameters including barrier height, ideality factor, reverse saturation current, series resistance, and shunt resistance were determined using several methods, such as TE, Ohm's Law, the modified Norde method, and the Mikhelashvili method. The results from these methods were found to be consistent with varying light intensities. Additionally, photodetector parameters of the MnPc/DLC device were measured at ±1 V under light intensities of 20, 40, 60, 80, and 100 mW/cm2, and the findings were compared with the literature. The maximum values for photocurrent, photoresponsivity, photosensitivity, specific detectivity, and on/off ratio were 6.41 × 10−2 A, 2.49 A/W, 2.02 × 105, 5.8 × 109 Jones and 2.06 × 103, respectively. Notably, the photocurrent, photoresponsivity, photosensitivity, and on/off ratio values were found to be significantly higher and more promising compared to those reported in the literature.

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