Kök, Mediha; Öztürk, Yunus; Sait Kanca, M.

In this study, Sb2Se3-based semiconductor thin films, both pure Sb2Se3 and those doped with Bi and Sn, were produced using the thermal evaporation method. The structural, morphological, and optical properties of the obtained films were investigated using XRD, SEM, and UV–Vis spectroscopy. While films without annealing exhibited an amorphous structure, significant crystallization was observed after annealing at 350 °C, especially at high doping levels. SEM analyses showed significant changes in surface morphology and grain structure depending on the doping level. Optical measurements revealed that absorption increased and the band gap changed with increasing doping level. The band gap for the undoped Sb2Se3 thin film was found to be 1.54 eV. An increase due to the Burstein–Moss effect was observed at low additive ratios, while band narrowing was observed at high additive ratios. The results obtained indicate that Bi and Sn additives improve the optoelectronic properties of Sb2Se3 thin films and hold potential for photovoltaic applications.

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Aydin, Handan; Sait Kanca, M.; Kök, Mediha; Taşgin, Yahya; Tatar, Beyhan

Thin film technology aims to improve and develop the properties of materials by coating technology. In this study, thin films consisting of rare earth element and selenium semiconductor material, which have recently been preferred in technological applications due to their important properties, are examined. Selenium thin films doped with Ho2O3 and Dy2O3 rare earth oxides (REO) were fabricated on glass substrate by thermal evaporation method. The surface morphology and optical properties of the thin films were investigated. As a result of surface morphology examinations, it was determined that homogeneous thin films were obtained and the thickness of the thin films varied between 20 and 30 μm. In addition, the roughness value of the glass substrate decreased as a result of coating with doped selenium thin film. The band energy value obtained by UV-VIS measurements decreased compared to glass and was close to the selenium element value. In the comparison between selenium coatings doped with Ho2O3 and Dy2O3, a notable reduction in the Eg value was observed specifically in the Ho2O3 doped coatings.

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