Sürdürülebilir Kalkınma Amaçları
Yayınlar
- MakaleAçık Erişim2019Scopus SJRQ3The effects of deposition potential on the optical, morphological and mechanical properties of DLC films produced by electrochemical deposition technique at low voltages
Aslan, Naim; Başman, Necati; Uzun, Orhan; Erkovan, Mustafa; Yakuphanoǧlu, Fahrettin
Diamond-like carbon (DLC) films were electrochemically deposited onto indium tin oxide (ITO) substrates using acetic acid and deionized water as electrolyte at low deposition voltages (2.4 V and 60 V). The transmittance of the films was investigated by UV spectrometry. Transmittance measurements versus wavelength revealed that the films transmit 86 % to 89 % light in visible region and band gap of the films varies between 3.87 eV and 3.89 eV. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used for structural characterization to evaluate surface morphology of the DLC films. The grain size and the surface roughness increased for the films prepared at higher deposition potential, while their measured average height decreased. The mechanical properties (hardness H and elastic modulus Er) were determined from load-displacement curves which were obtained by using nanoindentation method. Hardness and elastic modulus of the films increased as the deposition voltage of the films increased from 2.4 V to 60 V.
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İncele - MakaleAçık Erişim2019Scopus SJRQ2Electrical characterization of solar sensitive zinc oxide doped-amorphous carbon photodiode
Koç, Mümin Mehmet; Aslan, Naim; Erkovan, Mustafa; Aksakal, Bünyamin; Uzun, Orhan; Farooq, W. Aslam; Yakuphanoğlu, Fahrettin
A new solar-sensitive zinc oxide doped-amorphous carbon diode was fabricated using the electrochemical deposition technique. The current-voltage characteristics of the fabricated Al/ZnO-a:C/p-Si/Al diode were investigated under dark and various lighting intensities using both I-V and C-V methods. The fabricated diode was characterized by XRD, SEM-EDS, FTIR and XPS analysis. Through the analysis, it was determined that the photocurrents increased with increasing intensity of incident light. The capacitance-voltage (C-V) characteristics revealed that the capacitance of the diode depended on voltage, frequency and illumination, indicating the existence of a continuous distribution of interface states. It was found that the capacitance changed drastically with changing frequency and separation was observed in different frequencies, as identified in the reverse bias region. The ideality factor obtained was found to be higher than unity, with the average barrier height and ideality factor of the diode were found to be 0.528 ± 0.0069 eV and 5.24 ± 0.39, respectively. The newly fabricated ZnO-doped amorphous carbon (Al/ZnO-a:C/p-Si/Al) photodiode exhibited good solar sensitivity. The overall results indicated that the fabricated Al/ZnO-a:C/p-Si can be used as a solar sensitive diode in optoelectronic device applications as an alternative to graphene-based materials.
AtıfScopus41OpenAlex46İncele