Sürdürülebilir Kalkınma Amaçları
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- MakaleYayıncıda açık erişim2024Scopus SJRQ1Photonic device application of a self-driven MXene based nanocomposite
Demirelli, Kadir; Dere, Ayşegül; Barım, Esra; Tuncer, Hülya; Yakuphanoğlu, Fahrettin
MXene based ternary composite photonic device was fabricated and characterized for the detection of different illuminations. The single chain polymer-cobalt phthallocyanine (SCP-CoPc) carrying metallised pthalocyanine macro ring was used as a polymer for the preparation of ternary composite. The Fourier Transform Infrared Spectroscopy (FT-IR), Transmission Electron Microscopy (TEM), Scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM/EDX) were used to differentiate MXene/ZnO/SCP-CoPc composite prepared. The presence of Ti, C, O, Zn and Co elements in the structure of the composite was confirmed by EDX. The electrical properties of planar interdigital coated MXene/ZnO/SCP-CoPc (1:1:1 by wt) were investigated for photovoltaic application. The photo-generated carriers contribute to the current flow, and the linear photoconductivity behaviour in current measurements with different illuminations such as 20, 40, 60, 80 and 100 mW/cm2 indicates the possible photo device use of MXene/ZnO/SCP-CoPc nanocomposite. The photocurrent increased from 20 mA/cm2 to 100 mA/cm2 with the light intensity at 0.5 V was tuned from 28 to 280 μA. The forbidden energy gap (Eg) value of the MXene/ZnO/SCP-CoPc ternary composite from optical measurements was found to be 2.36 eV. Experimental results showed that the presence of SCP-CoPc and ZnO (zinc oxide) in the ternary nanocomposite increased the ε' and ε" values of MXene. The ε′ and ε″ of the ternary composite is 13.0, 26217 at 1 kHz and room temperature, respectively. The current-time results suggest that MXene based ternary composite photonic device is a self driven photodevice as the device can detect light without any external voltage bias.
AtıfScopus6OpenAlex6
İncele - MakaleAçık Erişim2024Scopus SJRQ1Preparation of carbon dot/polyaniline composites as voltage based dielectric material for capacitor applications
Coğalmış, Fatma Tuba; Demirelli, Kadir; Barım, Esra; Ük, Nida; Ünlü, Caner; Şenkal, Bahire Filiz; Dere, Ayşegül; Tuncer, Hülya; Yakuphanoğlu, Fahrettin
Polyaniline-carbon dot (CD/PANI) composites were prepared via in-situ oxidative polymerization of aniline in the presence of carbon dots, with specific concentrations carefully controlled during synthesis. The composite was characterized using spectroscopic (FT-IR), morphological (TEM, SEM) and electrical methods. Impedance analysis was employed to investigate the transport behavior of charge carriers in the frequency range of 500 Hz to 10 MHz at 25 °C. This study provides a comprehensive analysis of the dielectric properties of the CD/PANI composite, including dielectric constant, dielectric loss, loss factor, AC conductivity, admittance, impedance, and Cole–Cole plots. The dielectric constant of the CD/PANI composite was 6.97 for 1 kHz at 0.5 V and 12.87 for 1 kHz at 5 V. The values indicate that the increase in the dielectric constant of nanocomposite with increasing voltage. This suggests that CD/PANI composite is a dielectric material whose dielectric constants are controlled by applied voltage. Notably, the dielectric constant increased with rising applied voltage and decreased with increasing frequency. Current-voltage (I-V) measurements revealed that the composite's dielectric parameters could be tuned by varying the applied DC voltage, suggesting its potential as a voltage-dependent dielectric (VDD) material for capacitor applications. Furthermore, the enhanced electrical conductivity indicates that the CD/PANI composite is a promising candidate for next-generation dielectric devices.
AtıfScopus7OpenAlex7İncele - MakaleAçık Erişim2019Scopus SJRQ2Electrical characterization of solar sensitive zinc oxide doped-amorphous carbon photodiode
Koç, Mümin Mehmet; Aslan, Naim; Erkovan, Mustafa; Aksakal, Bünyamin; Uzun, Orhan; Farooq, W. Aslam; Yakuphanoğlu, Fahrettin
A new solar-sensitive zinc oxide doped-amorphous carbon diode was fabricated using the electrochemical deposition technique. The current-voltage characteristics of the fabricated Al/ZnO-a:C/p-Si/Al diode were investigated under dark and various lighting intensities using both I-V and C-V methods. The fabricated diode was characterized by XRD, SEM-EDS, FTIR and XPS analysis. Through the analysis, it was determined that the photocurrents increased with increasing intensity of incident light. The capacitance-voltage (C-V) characteristics revealed that the capacitance of the diode depended on voltage, frequency and illumination, indicating the existence of a continuous distribution of interface states. It was found that the capacitance changed drastically with changing frequency and separation was observed in different frequencies, as identified in the reverse bias region. The ideality factor obtained was found to be higher than unity, with the average barrier height and ideality factor of the diode were found to be 0.528 ± 0.0069 eV and 5.24 ± 0.39, respectively. The newly fabricated ZnO-doped amorphous carbon (Al/ZnO-a:C/p-Si/Al) photodiode exhibited good solar sensitivity. The overall results indicated that the fabricated Al/ZnO-a:C/p-Si can be used as a solar sensitive diode in optoelectronic device applications as an alternative to graphene-based materials.
AtıfScopus41OpenAlex46
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