Sürdürülebilir Kalkınma Amaçları

• 2

Yazarlar

• Yüzüak, E.(2)
• Yüzüak, G. Durak(2)

• MakaleYalnız künye2026Scopus SJRQ1/r/munzur/4915
  Influence on the thermoelectric characteristics of the growth parameters of BiSeTe thin films

  Yüzüak, G. Durak; Yüzüak, E.

  This study systematically investigates the influence of magnetron sputtering parameters on the structural, electronic, and thermoelectric properties of 100 nm thick Bi2SexTe3-x thin films deposited on Si(100). The initial parameters for applied film deposition are used to set the x value. The films are fabricated with sputtering powers ranging from 30 to 100 W and pressures from 3 to 15 mTorr, with films grown under optimal conditions selected for post-deposition annealing at 523 K. A comprehensive characterization suite, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM), is used to establish direct correlations between processing, structure, and performance. XRD analysis reveals that increasing the sputtering pressure from 3 to 15 mTorr was critical for enhancing film crystallinity and promoting a strong (015) preferred orientation, while AFM showed a corresponding increase in average grain size from similar to 46 to similar to 60 nm via heat treatment (HT). EDS shows that films grown at 10 mTorr were almost certainly stoichiometric, but increasing the power to 15 mTorr caused tellurium deficiency. The films exhibited a power factor ranging from 2.5 to 2.8 mW m(- 1) K- 2 at 40 degrees C. HT improved the Seebeck coefficient from -115 mu V K- 1 to -140 mu V K- 1 and decreased the electrical resistivity by over 25 % through defect reduction and enhanced crystalline order. KPFM supported these findings, directly linking the crystallographic texture to the surface electronic structure and enhanced Seebeck effect.

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  AtıfWoS2·OpenAlex2

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• MakaleYalnız künye2026Scopus SJRQ1/r/munzur/1062
  Engineering high-performance BiSeTe ultra-thin film on flexible FEP

  Yüzüak, G. Durak; Yüzüak, E.

  Flexible thermoelectric (TE) devices hold great promise for powering wearable electronics by harvesting the temperature difference between human skin and the environment. Conventional Bi2Te3, although efficient, suffers from rigidity and limited suitability for flexible applications, while organic alternatives typically lack sufficient TE performance. Here, we demonstrate an n-type BiSeTe thin film deposited on a flexible fluorinated ethylene propylene (FEP) substrate, incorporating a Cr buffer layer, achieving a room-temperature power factor of ∼3.9 μW.cm−1.K−2, which is within the range reported for flexible thin-film TE devices on polymer substrates. The film exhibits excellent mechanical resilience, retaining 90 % of its initial conductivity after 5000 bending cycles, and shows high thermal stability over 50 heating–cooling cycles with deviations below 1.5 %. A four-leg n-type prototype generates 10 mV and 70 nW at ΔT = 40 K, demonstrating its potential for powering low-energy wearable sensors. This work presents a scalable inorganic thin-film TE platform that effectively balances mechanical flexibility, device stability, and practical energy conversion performance for wearable and localized power generation applications.

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  AtıfScopus2·WoS2·OpenAlex2

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