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- MakaleYalnız künye2026Scopus SJRQ1Influence on the thermoelectric characteristics of the growth parameters of BiSeTe thin films
Yüzüak, G. Durak; Yüzüak, E.
This study systematically investigates the influence of magnetron sputtering parameters on the structural, electronic, and thermoelectric properties of 100 nm thick Bi2SexTe3-x thin films deposited on Si(100). The initial parameters for applied film deposition are used to set the x value. The films are fabricated with sputtering powers ranging from 30 to 100 W and pressures from 3 to 15 mTorr, with films grown under optimal conditions selected for post-deposition annealing at 523 K. A comprehensive characterization suite, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM), is used to establish direct correlations between processing, structure, and performance. XRD analysis reveals that increasing the sputtering pressure from 3 to 15 mTorr was critical for enhancing film crystallinity and promoting a strong (015) preferred orientation, while AFM showed a corresponding increase in average grain size from similar to 46 to similar to 60 nm via heat treatment (HT). EDS shows that films grown at 10 mTorr were almost certainly stoichiometric, but increasing the power to 15 mTorr caused tellurium deficiency. The films exhibited a power factor ranging from 2.5 to 2.8 mW m(- 1) K- 2 at 40 degrees C. HT improved the Seebeck coefficient from -115 mu V K- 1 to -140 mu V K- 1 and decreased the electrical resistivity by over 25 % through defect reduction and enhanced crystalline order. KPFM supported these findings, directly linking the crystallographic texture to the surface electronic structure and enhanced Seebeck effect.
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İncele - MakaleYalnız künye2026Scopus SJRQ1Compositionally segmented thermoelectric BiSbTe thin films on Cr/Si(100)
Yüzüak, G. Durak; Yüzüak, E.
Compositionally segmented thermoelectric (CS-TE) structures improve thermal energy conversion efficiency across large thermal gradients. However, their increased design complexity complicates performance modeling and optimization. In this study, we fabricate CS-TE BiSbTe thin films on Cr-buffered Si(100) substrates. By adopting a multidisciplinary approach, we aim to broaden the technological applicability and strategic relevance of advanced TE systems. We systematically analyze the influence of deposition pressures (5, 7, and 10 mTorr) on TE performance. Variations in working pressure alter the Bi/Sb atomic ratio in the films, while the Te content remains stable. This enables the controlled formation of CS structures. At 323 K, the power factor (PF) of TE thin films reaches 0.7, 2.4, and 7.3 mW/mK2 under 5, 7, and 10 mTorr deposition conditions, respectively. The Cr-buffered layer significantly improves the electrical conductivity of CS-TE BiSbTe films. We further engineer a p-type single-leg device integrating nanostructured Bi0.35Sb1.65Te3, Bi0.37Sb1.63Te3, and Bi0.4Sb1.60Te3 layers. These materials are optimized to achieve peak TE PF values across a wide temperature range (320 to 500 K) while ensuring robust interfacial adhesion. The CS-TE device generates 3 mW/cm2, showing a 15% improvement over single-composition samples at a 100 K temperature difference.
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İncele - MakaleYalnız künye2026Scopus SJRQ1Engineering high-performance BiSeTe ultra-thin film on flexible FEP
Yüzüak, G. Durak; Yüzüak, E.
Flexible thermoelectric (TE) devices hold great promise for powering wearable electronics by harvesting the temperature difference between human skin and the environment. Conventional Bi2Te3, although efficient, suffers from rigidity and limited suitability for flexible applications, while organic alternatives typically lack sufficient TE performance. Here, we demonstrate an n-type BiSeTe thin film deposited on a flexible fluorinated ethylene propylene (FEP) substrate, incorporating a Cr buffer layer, achieving a room-temperature power factor of ∼3.9 μW.cm−1.K−2, which is within the range reported for flexible thin-film TE devices on polymer substrates. The film exhibits excellent mechanical resilience, retaining 90 % of its initial conductivity after 5000 bending cycles, and shows high thermal stability over 50 heating–cooling cycles with deviations below 1.5 %. A four-leg n-type prototype generates 10 mV and 70 nW at ΔT = 40 K, demonstrating its potential for powering low-energy wearable sensors. This work presents a scalable inorganic thin-film TE platform that effectively balances mechanical flexibility, device stability, and practical energy conversion performance for wearable and localized power generation applications.
AtıfScopus2WoS2OpenAlex2İncele - MakaleYalnız künye2024Scopus SJRQ2Optimizing the thermoelectric performance of Bi-Sb-Te thin films through compositional engineering
Yüzüak, Gizem Durak; Çetin, Mehmet; Yüzüak, Ercüment
The objective of the present investigation was to systematically investigate the structural and thermoelectric (TE) properties of BixSb2-xTe3 thin films with varying content of Bi. We investigated the impact of different atomic percentages of Bi (4, 6, 8 at. %) on the properties of carrier transport and TE performance. In general, the Seebeck coefficient remained consistent across the thin films. For the 8 at. % Bi thin film, the Seebeck coefficient and electrical conductivity were measured at 230 μV/K and 730 S/cm, respectively, at room temperature. These values were more than 20 times greater than the electrical conductivity observed in the thin films with compositions of 6 and 4 at. % Bi. As a result, the Bi-Sb-Te compound exhibited a TE power factor (PF) of 38x10−4 W/mK2 at 40 °C, surpassing the PFs observed in previous compositions. The analysis of surface microstructure, combined with atomic force microscopy and Kelvin probe microscopy images, revealed that the transport of carriers in films with high Bi content was impeded by the size of particles and scattering sites. On the other hand, an augmentation in Bi content promoted the transfer of charge through crystalline regions, hence improving the mobility of carriers and the total electrical conductivity. The aforementioned results emphasize the significant influence of Bi content on the electrical properties of semiconductors and demonstrate the effectiveness of compositional engineering based on Bi content in the development of TE materials with superior performance. The present study investigates the influence of Bi content on the electrical properties of Bi-Sb-Te thin films, demonstrating that compositional adjustments based on Bi content can impact the performance of TE materials. These findings contribute to the understanding of material optimization in the field of TE.
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