Evaluation of TiO2/ZnO/SnO2 multilayer thin films on Si(100) as triboelectric friction layer

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Özet

This study presents a novel multilayer-semiconductor triboelectric nanogenerator (MLSC-TENG) that enhances charge transfer and initial charge density to overcome the limitations of conventional TENGs by multilayer thin films composed of TiO2, ZnO, and SnO2. The device operates through contact electrification and electrostatic induction, featuring two distinct electrodes. The active negative layer is deposited on Si substrates with an Ag seed layer using magnetron sputtering, employing a PET/ITO counter-electrode. The system attains a maximum power density of 400 mW/m2 with a 100 MΩ load, a short-circuit current of 20 μA at 10 Hz, and an open-circuit voltage of ±55 V. Additionally, it powers 156 LEDs and exhibits an energy storage capacity of 16.9 μJ at 52 μF, highlighting its applicability for wearable electronics. This scalable and cost-effective approach highlights the significant role of semiconductor (SC) band structures in enhancing TENG performance and presents a viable pathway for sustainable energy harvesting. The demonstrated strategy has the potential to meaningfully influence the application of TENGs in energy harvesting systems, providing a cost-effective solution for powering wearable electronics. The study facilitates progress in sustainable energy solutions for future wearable technologies by tackling critical issues in energy conversion efficiency.

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dc.contributor.authorYüzüak, G. Durak
dc.contributor.authorYüzüak, E.
dc.date.accessioned2026-10-28T14:53:53.516592451Z
dc.date.available2026-10-28T14:53:53.516592451Z
dc.date.issued2025
dc.description.abstractThis study presents a novel multilayer-semiconductor triboelectric nanogenerator (MLSC-TENG) that enhances charge transfer and initial charge density to overcome the limitations of conventional TENGs by multilayer thin films composed of TiO2, ZnO, and SnO2. The device operates through contact electrification and electrostatic induction, featuring two distinct electrodes. The active negative layer is deposited on Si substrates with an Ag seed layer using magnetron sputtering, employing a PET/ITO counter-electrode. The system attains a maximum power density of 400 mW/m2 with a 100 MΩ load, a short-circuit current of 20 μA at 10 Hz, and an open-circuit voltage of ±55 V. Additionally, it powers 156 LEDs and exhibits an energy storage capacity of 16.9 μJ at 52 μF, highlighting its applicability for wearable electronics. This scalable and cost-effective approach highlights the significant role of semiconductor (SC) band structures in enhancing TENG performance and presents a viable pathway for sustainable energy harvesting. The demonstrated strategy has the potential to meaningfully influence the application of TENGs in energy harvesting systems, providing a cost-effective solution for powering wearable electronics. The study facilitates progress in sustainable energy solutions for future wearable technologies by tackling critical issues in energy conversion efficiency.
dc.description.sponsorshipTürkiye Bilimsel ve Teknolojik Araştırma Kurumu, TÜBİTAK, (119M972, TR 2022 013141 B)
dc.description.sponsorshipTürkiye Bilimsel ve Teknolojik Araştırma Kurumu, TÜBİTAK
dc.identifier.articlenumber114351
dc.identifier.doi10.1016/j.vacuum.2025.114351
dc.identifier.eissn1879-2715
dc.identifier.issn0042-207X
dc.identifier.scopus2-s2.0-105003089455
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/munzur/1088
dc.identifier.volume239
dc.identifier.wosWOS:001479005000001
dc.language.isoen
dc.publisherElsevier Ltd
dc.relation.ispartofVacuum
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMultilayer thin films
dc.subjectMultiLayer-SemiConductor TriboElectric NanoGenerator
dc.subjectTriboelectric nanogenerator (TENG)
dc.subjectTriboelectricity
dc.subject.classificationMaterials Science, Multidisciplinary
dc.subject.classificationPhysics, Applied
dc.subject.classificationMaterials Science
dc.subject.classificationPhysics
dc.subject.otherCarrier concentration
dc.subject.otherElectrostatic devices
dc.subject.otherLayered semiconductors
dc.subject.otherMultilayer films
dc.subject.otherMultilayers
dc.subject.otherNanocomposite thin films
dc.subject.otherNanogenerators
dc.subject.otherSemiconducting silicon compounds
dc.subject.otherSemiconducting zinc compounds
dc.subject.otherSolar power generation
dc.subject.otherSurface discharges
dc.subject.otherTin compounds
dc.subject.otherWide band gap semiconductors
dc.subject.otherZinc oxide
dc.subject.otherFriction layers
dc.subject.otherMulti-layer thin film
dc.subject.otherMultilayer-semiconductor triboelectric nanogenerator
dc.subject.otherSi(1 0 0)
dc.subject.otherSnO 2
dc.subject.otherTiO 2
dc.subject.otherTriboelectric nanogenerator
dc.subject.otherZnO/SnO
dc.subject.otherTitanium dioxide
dc.titleEvaluation of TiO2/ZnO/SnO2 multilayer thin films on Si(100) as triboelectric friction layer
dc.typeArticle
rdl.citation.openalex3
rdl.citation.scopus2
rdl.citation.wos3
rdl.oa.statusclosed
rdl.scopus.quartileQ1
rdl.sdgSDG07
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)