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- MakaleAçık Erişim2019Scopus SJRQ2Electrical characterization of solar sensitive zinc oxide doped-amorphous carbon photodiode
Koç, Mümin Mehmet; Aslan, Naim; Erkovan, Mustafa; Aksakal, Bünyamin; Uzun, Orhan; Farooq, W. Aslam; Yakuphanoğlu, Fahrettin
A new solar-sensitive zinc oxide doped-amorphous carbon diode was fabricated using the electrochemical deposition technique. The current-voltage characteristics of the fabricated Al/ZnO-a:C/p-Si/Al diode were investigated under dark and various lighting intensities using both I-V and C-V methods. The fabricated diode was characterized by XRD, SEM-EDS, FTIR and XPS analysis. Through the analysis, it was determined that the photocurrents increased with increasing intensity of incident light. The capacitance-voltage (C-V) characteristics revealed that the capacitance of the diode depended on voltage, frequency and illumination, indicating the existence of a continuous distribution of interface states. It was found that the capacitance changed drastically with changing frequency and separation was observed in different frequencies, as identified in the reverse bias region. The ideality factor obtained was found to be higher than unity, with the average barrier height and ideality factor of the diode were found to be 0.528 ± 0.0069 eV and 5.24 ± 0.39, respectively. The newly fabricated ZnO-doped amorphous carbon (Al/ZnO-a:C/p-Si/Al) photodiode exhibited good solar sensitivity. The overall results indicated that the fabricated Al/ZnO-a:C/p-Si can be used as a solar sensitive diode in optoelectronic device applications as an alternative to graphene-based materials.
AtıfScopus41OpenAlex46
İncele - MakaleAçık Erişim2018Scopus SJRQ3Ti doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications
Aslan, Naim; Koç, Mümin Mehmet; Dere, Ayşegül; Arif, Bilal; Erkovan, Mustafa; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, Fahrettin
Electrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current–voltage (I–V) characteristics of the Al/a:C/p-Si/Al doped Ti diode for optoelectronic applications were investigated. The reverse current of the diode increased with the increasing illumination intensities when the bias voltage was applied. By using the forward bias I–V characteristics, the ideality factor (n) and barrier height (Φb) of Al/Ti-a:C/p-Si photodiode structure was found as 1,84 and 0,50 eV, respectively. In addition, the capacitance–voltage (C–V) and conductance–voltage (G–V) measurements of the diode were studied in the frequency range of 100 kHz–600 kHz. The measured values of the capacitance decreased with the increasing frequency. The photoelectrical properties of Al/Ti-a:C/p-Si/Al device indicates that the photodiode investigated in this paper has great potential to be used in optoelectronic device applications and in industry.
AtıfScopus41OpenAlex43İncele